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Generally, semiconductor devices are produced by fabrication processes which include the steps of formation of a circuit forming a chip, formation of interlayer insulating film (formation of an interlayer insulating film) by forming an interlayer insulating film on a semiconductor substrate, and formation of via holes in the interlayer insulating film. Further, formation of a conductive layer is carried out for an electrical connection between the semiconductor substrate and the semiconductor circuit. This technique is disclosed in detail in Japanese Laid-Open Patent Publication Nos. 59-81652, 4-273429 and 2-287455. It is desirable that the via holes are formed penetrating through interlayer insulating film (insulating layer).
However, the via holes formed penetrating through interlayer insulating film (insulating layer) have undesired portions which are referred to as xe2x80x9cemptyxe2x80x9d and xe2x80x9csweptxe2x80x9d portions. When the semiconductor device is equipped with a conductive layer, the empty portion of the via hole becomes a crack at the time of shrinkage or the like of the conductive layer. Then, the semiconductor device may be seriously broken. Further, at the time when a circuit pattern is formed over the interlayer insulating film by lithography, the positive photo resist is removed by a developing solution by the flowed through the empty portions of the via holes. In this case, the pattern is undesirably de